TDB6HK95N16LOF Thyristor/Diode Module Technical Analysis

November 4, 2025296 Views 10 min read

## TDB6HK95N11LOF and TDB6HK95N16LOF Datasheet
https://www.top-power.it/wp-content/uploads/2016/10/TDB6HK95N_12_16LOF_V2_2.pdf
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Datasheet / Datenblatt TDB6HK95N12LOF TDB6HK95N16LOF
Page 1. 1. 技术信息/ Technical Information. TDB6HK95N12LOF TDB6HK95N16LOF. 晶闸管/二极管模块. Thyristor / Diode Modules prepared by: MW approved by: MW date of publication: 2013-08-19 revision: 3.1. UL approved (E83335). TDB6HK95N… TDB6HK95N…L. TDB6HK95N… F. 模块标签代码/ Module Label Code. 条形码/ Barcode Code 128. DMX – 代码/ DMX – Code. 内容/ Content of the Code. Digit. 模块序列号/ Module Serial Number. 1 – 5. 模块物料号/ Module Material Number. 6 – 11. 生产订单号/ Production Order Number. 12 – 19. 日期代码(生产年份). Datecode (Production Year). 20 – 21. 日期代码(生产星期). Datecode (Production Week). 22 – 23. Page 2. 2. 技术信息/ Technical Information. TDB6HK95N12LOF TDB6HK95N16LOF. 晶闸管/二极管模块. Thyristor / Diode Modules prepared by: MW approved by: MW date of publication: 2013-08-19 revision: 3.1. 特征/ Features. •. •. 绝缘的基板. Isolated Base Plate. •. •. 标封装. Standard Housing. •. •. 焊接技术. Solder Contact Technology. •. •. 压力接触技术. Pressure Contact Technology. •. •. UL approved (E83335). •. •. 模块内的配置. Configuration in the module. T6. D6. G1. G2. K1. K2. E1. E2. 1. 2. 3. 4. 5. 6. 7. 典型应用. Typical Applications. •. •. 三相半控整流桥. Half Controlled B6-bridge. •. •. 直流斩波器的制动斩波器. DC-Choppers for mains returned energy. •. •. 有源整流器. Active Rectifier. •. •. 软启动. Softstart-applications. Page 3. 3. 技术信息/ Technical Information. TDB6HK95N12LOF TDB6HK95N16LOF. 晶闸管/二极管模块. Thyristor / Diode Modules prepared by: MW approved by: MW date of publication: 2013-08-19 revision: 3.1. 晶闸管/ Thyristor T1, T2. 最大额定值/ Maximum Rated Values. 重复峰值断态电压. Repetitive peak off-state voltage. Tvj = -40°C … 125°C. VDRM. 1200. 1600. V. 反向重复峰值电压. Repetitive peak reverse voltage. Tvj = -40°C … 125°C. VRRM. 1200. 1600. V. 通态方均根电流. RMS on-state current. TC = 80°C. ITRMSM. 75. A. 通态平均电流.
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– “”
– 软启动
– Softstart-applications.
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– “”
– 直流斩波器的制动斩波器
– DC-Choppers for mains returned energy.
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– “”
– 压力接触技术
– Pressure Contact Technology.
…

– “”
– 典型应用
– Typical Applications.
– 特征/ Features.
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TDB6HK95N12LOF, TDB6HK95N16LOF
Page 1. 1. Technical Information. TDB6HK95N12LOF TDB6HK95N16LOF. Thyristor / Diode Modules. UL approved (E83335). TDB6HK95N… TDB6HK95N…L. TDB6HK95N…F. Module Label Code. Barcode Code 128. DMX – Code. Content of the Code. Digit. Module Serial Number. 1 – 5. Module Material Number. 6 – 11. Production Order Number. 12 – 19. Datecode (Production Year). 20 – 21. Datecode (Production Week). 22 – 23. Page 2. 2. Technical Information. TDB6HK95N12LOF TDB6HK95N16LOF. Thyristor / Diode Modules. Features. Typical Applications. • Isolated Base Plate. • Half Controlled B6-bridge. • Standard Housing. • DC-Choppers for mains returned energy. • Solder Contact Technology. • Active Rectifier. • Pressure Contact Technology. • Softstart-applications. • UL approved (E83335). • Configuration in the module. T6. D6. G1. G2. K1. K2. E1. E2. 1. 2. 3. 4. 5. 6. 7. Page 3. 3. Technical Information. TDB6HK95N12LOF TDB6HK95N16LOF. Thyristor / Diode Modules. Thyristor T1, T2. Maximum Rated Values. Repetitive peak off-state voltage. Tvj = -40°C … 125°C. VDRM. 1200. 1600. V. Repetitive peak reverse voltage. Tvj = -40°C … 125°C. VRRM. 1200. 1600. V. RMS on-state current. TC = 80°C. ITRMSM. 75. A. Average on-state current. TC = 80°C, half sine 50 Hz. ITAVM. 50. A. Surge forward current. tp = 10 ms, Tvj = 25°C. ITSM. 1000. A. tp = 10 ms, Tvj = 125°C. 880. I²t – value. tp = 10 ms, Tvj = 25°C. I²t. 5000. A²s. tp = 10 ms, Tvj = 125°C. 3870.
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Maximum junction temperature. Tvj max. 125. °C. Operating junction temperature. Tvj op. -40 … 125. °C. Storage temperature. Tstg. -40 … 125. °C. Isolation test voltage. RMS, f = 50 Hz, t = 1 min. VISOL. 2,5. kV. Creepage distance. dCreep. 10. mm. Clearance. dClear. 10. mm.
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
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TDB6HK124N16LOF
Page 1. TDB6HK124N16LOF, TDB6HK145N16LOF,. TDB6HK165N16LOF. Thyristor / Diode Modules. TDB6HK124N16LOF, TDB6HK145N16LOF,. TDB6HK165N16LOF. Technical Information. Page 2. TDB6HK124N16LOF, TDB6HK145N16LOF,. TDB6HK165N16LOF. 2. Features. • Pressure contact technology for high reliability. • Industrial standard package. • Electrically insulated baseplate. • High surge capability. • UL E83335 approved. Applications. • Soft starters. • Motor drives. • DC braking. • Controlled rectifiers. Page 3. TDB6HK124N16LOF, TDB6HK145N16LOF,. TDB6HK165N16LOF. 3. Thyristor T1, T2. Maximum ratings. Parameter. Symbol. Conditions. Values. Unit. Repetitive peak off-state voltage. VDRM. Tvj = -40 to 150°C. 1600. V. Repetitive peak reverse voltage. VRRM. Tvj = -40 to 150°C. 1600. V. RMS on-state current. ITRMSM. TC = 80°C. 124 145 165. A. Average on-state current. ITAVM. TC = 80°C, half-sine 50 Hz. 80. 95. 105. A. Surge forward current. ITSM. tp = 10 ms, Tvj = 25°C. 2100 2400 2900. A. tp = 10 ms, Tvj = 150°C. 1800 2100 2500. A. I²t-value. I²t. tp = 10 ms, Tvj = 25°C. 22000 29000 42000. A²s. tp = 10 ms, Tvj = 150°C. 16200 22000 31000. A²s. Critical rate of rise of on-state current. (diT/dt)cr. f = 50 Hz, Tvj = 150°C, IG = 1 A, diG/dt = 1 A/µs, VD = 2/3 VDRM. 150. A/µs. Critical rate of rise of off-state voltage. (dvD/dt)cr.
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Maximum junction temperature. Tvj max. 150. °C. Operating junction temperature. Tvj op. -40 … 150. °C. Storage temperature range. Tstg. -40 … 125. °C. Isolation test voltage. VISOL. 50 Hz, t=1min, connecting pins to heat sink. 3000. V. Page 4. TDB6HK124N16LOF, TDB6HK145N16LOF,. TDB6HK165N16LOF. 4. Characteristic values.
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Gate trigger current. IGT. Tvj = 25°C, VD=6V. max. 150. mA. Gate trigger voltage. VGT. Tvj = 25°C, VD=6V. max. 1,5. V. Gate non-trigger current. IGD. Tvj = 150°C, VD=6V. max.
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Creepage distance. 12,7. mm. Clearance. 9,6. mm. Page 6. TDB6HK124N16LOF, TDB6HK145N16LOF,. TDB6HK165N16LOF. 6. Characteristics. 0. 50. 100. 150. 200. 250. 300. 350. 400. 0. 0.5. 1. 1.5. 2. 2.5. iT [A]. vT [V]. Tvj=25°C. Tvj=150°C. Fig. 1 On-state characteristic of thyristor.
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0.01. 0.1. 1. 10. 100. 1000. 0. 0.05. 0.1. 0.15. 0.2. 0.25. t [s]. Rth(j-c) [K/W]. Fig. 3 Transient thermal impedance of thyristor.
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0.01. 0.1. 1. 10. 100. 1000. 0. 0.05. 0.1. 0.15. 0.2. 0.25. 0.3. 0.35. t [s]. Rth(j-c) [K/W]. Fig. 6 Transient thermal impedance of diode.
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TDB6HK95N16LOF EUPEC Thyristor / Diode Modules datasheet pdf …
TDB6HK95N16LOF EUPEC Thyristor / Diode Modules datasheet pdf, TDB6HK95N16LOF specifications, TDB6HK95N16LOF parameters, TDB6HK95N16LOF pinout, TDB6HK95N16LOF manual, TDB6HK95N16LOF schematic, TDB6HK95N16LOF equivalent.
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TDB6HK95N16LOF EUPEC Thyristor / Diode Modules datasheet pdf, TDB6HK95N16LOF specifications, TDB6HK95N16LOF parameters, TDB6HK95N16LOF pinout, TDB6HK95N16LOF manual, TDB6HK95N16LOF schematic, TDB6HK95N16LOF equivalent.
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TDB6HK95N16LOF datasheet, TDB6HK95N16LOF circuit, TDB6HK95N16LOF …
TDB6HK95N16LOF Datasheet, TDB6HK95N16LOF PDF. Datasheet of TDB6HK95N16LOF. Description, No description for TDB6HK95N16LOF. File size, 292.56 Kbytes.
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TDB6HK95N16LOF Datasheet, TDB6HK95N16LOF PDF. Datasheet of TDB6HK95N16LOF. Description, No description for TDB6HK95N16LOF. File size, 292.56 Kbytes. Page, 11 Pages.
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The TDB6HK95N16LOF is a EUPEC make Thyristor / Diode Modules. Find the same inventory availability and prices of TDB6HK95N16LOF from various distributors.
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TDB6HK95N16LOF Thyristor/Diode Module Technical Analysis

High-Reliability Power Control with Pressure Contact Technology

The Infineon TDB6HK95N16LOF is a thyristor/diode module engineered for robust performance in high-power control applications. This device integrates a half-controlled B6-bridge configuration into a standard industrial housing, providing a high-reliability solution through the use of Pressure Contact Technology. This design approach ensures consistent operational integrity under demanding industrial conditions.

Core Specifications: 1600V | 95A | T_{vj op} -40 to 150°C
Key Advantages: High voltage blocking capability, robust mechanical design with an electrically isolated baseplate.
Engineered for Reliability: The module’s internal pressure contacts enhance thermal cycling capability, a critical factor for applications with frequent load changes.

For detailed electrical and thermal characteristics, download the official TDB6HK95N16LOF datasheet (PDF).

Top-down view of the TDB6HK95N16LOF module showing terminal layout and part number.

Angled view of the TDB6HK95N16LOF 1600V thyristor/diode module, highlighting the isolated baseplate.

Technical Analysis for System Integration

The TDB6HK95N16LOF’s primary value lies in its high voltage rating and robust construction. The 1600V repetitive peak reverse voltage (V_RRM) provides a substantial safety margin for systems operating on high-voltage industrial mains. This high blocking voltage is essential for preventing device failure during line voltage transients, directly contributing to overall system reliability and longevity.

The module’s thermal performance is a critical aspect of its design. The maximum thermal resistance from junction to case for the thyristor is specified at 0.36 K/W, and for the diode at 0.55 K/W. Think of thermal resistance like the width of a pipe for heat; a lower value means a wider pipe, allowing heat to escape more efficiently from the semiconductor junction to the heatsink. This efficient heat dissipation, facilitated by the module’s isolated copper baseplate, is fundamental for maintaining the junction temperature within safe operating limits, especially under continuous high-current loads.

Optimized Application Scenarios

The specific configuration and high voltage rating of the TDB6HK95N16LOF make it well-suited for a range of industrial power conversion tasks.

Controlled Rectifiers: The half-controlled bridge topology is ideal for creating variable DC voltage outputs from an AC source, with the 1600V rating providing robustness for direct connection to three-phase industrial lines.
Motor Soft Starters: By controlling the firing angle of the thyristors, this module can gradually ramp up voltage to a motor, reducing mechanical stress and inrush current. Its 95A average current rating supports medium-power industrial motors.
DC Braking Choppers: In motor drives, the module can be used to dissipate regenerative energy from the motor during deceleration, with its high surge current capability (up to 1800A for 10ms) easily handling braking energy pulses.

This module is an optimal match for industrial AC control and rectification systems requiring high voltage immunity and proven operational durability.

Key Specifications of the TDB6HK95N16LOF

Parameter		Value
Thyristor Ratings (T1, T2)	Repetitive Peak Reverse Voltage (V_RRM)	1600 V
Thyristor Ratings (T1, T2)	Average On-state Current (I_TAVM) @ T_C=80°C	95 A
Diode Ratings (D1-D3)	Repetitive Peak Reverse Voltage (V_RRM)	1600 V
Diode Ratings (D1-D3)	Average Forward Current (I_FAVM) @ T_C=80°C	95 A
Thermal and Mechanical	Operating Junction Temperature (T_{vj op})	-40 to 150 °C
	Isolation Test Voltage (V_ISOL)	3000 V (RMS, 50 Hz, 1 min)
	Thermal Resistance, Junction to Case (Thyristor) (R_thJC)	0.36 K/W (max)

Note: Specifications are based on the official manufacturer’s datasheet and may vary based on operating conditions.

Engineer’s Frequently Asked Questions

1. What are the main benefits of using the Pressure Contact Technology in the TDB6HK95N16LOF?
Pressure Contact Technology eliminates the need for solder joints on the semiconductor dies. This creates a more robust mechanical interface that is less susceptible to failure from thermal cycling fatigue, which is common in applications like soft starters or motor drives with frequent start/stop cycles.

2. How should the module be mounted for optimal thermal performance?
For effective cooling, the module’s isolated baseplate must make complete, uniform contact with a heatsink. A thin, even layer of thermal interface material (TIM) should be applied. The mounting screws must be tightened to the torque specified in the datasheet to ensure proper pressure without causing mechanical stress to the housing.

3. When is a half-controlled bridge configuration preferred over a fully controlled bridge?
A half-controlled bridge, as found in the TDB6HK95N16LOF, uses both thyristors and diodes. This configuration is often used in cost-sensitive applications where unidirectional power flow is sufficient, such as simple DC motor speed control or battery chargers. It offers less complex gate drive requirements compared to a fully controlled (six-thyristor) bridge.

Detailed schematic diagram for the TDB6HK95N16LOF Thyristor/Diode Module configuration.

Physical dimensions and mechanical drawing for the TDB6HK95N16LOF housing.

This power module provides engineers with a mechanically robust, high-voltage component for developing reliable and efficient industrial power control systems. The integration of Pressure Contact Technology and a half-controlled bridge in a standard package delivers a proven foundation for demanding applications. For more insights on power semiconductor selection, explore our guides on IGBT vs. SiC vs. GaN or the fundamentals of an isolated baseplate’s role in reliability.