#AP0503GMA APEC AP0503GMA New Transistor 75 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, mosfet, ROHS COMPLIANT, APAK-5, FET General Purpose Power, AP0503GMA pictures, AP0503GMA price, #AP0503GMA supplier
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Email: [email protected]
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Email: [email protected]
https://www.slw-ele.com/ap0503gma.html
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Manufacturer Part Number: AP0503GMA
Part Life Cycle Code: Contact Manufacturer
Ihs Manufacturer: ADVANCED POWER ELECTRONICS CORP
Package Description: SMALL OUTLINE, R-PSSO-G4
Pin Count: 5
ECCN Code: EAR99
Manufacturer: Advanced Power Electronics Corp
Risk Rank: 5.71
Avalanche Energy Rating (Eas): 29 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 30 V
Drain Current-Max (ID): 75 A
Drain-source On Resistance-Max: 0.0042 Ω
FET Technology: METAL-OXIDE Semiconductor
JESD-30 Code: R-PSSO-G4
Number of Elements: 1
Number of Terminals: 4
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 300 A
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: SINGLE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Transistor 75 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, mosfet, ROHS COMPLIANT, APAK-5, FET General Purpose Power
Part Life Cycle Code: Contact Manufacturer
Ihs Manufacturer: ADVANCED POWER ELECTRONICS CORP
Package Description: SMALL OUTLINE, R-PSSO-G4
Pin Count: 5
ECCN Code: EAR99
Manufacturer: Advanced Power Electronics Corp
Risk Rank: 5.71
Avalanche Energy Rating (Eas): 29 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 30 V
Drain Current-Max (ID): 75 A
Drain-source On Resistance-Max: 0.0042 Ω
FET Technology: METAL-OXIDE Semiconductor
JESD-30 Code: R-PSSO-G4
Number of Elements: 1
Number of Terminals: 4
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 300 A
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: SINGLE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Transistor 75 A, 30 V, 0.0042 ohm, N-CHANNEL, Si, POWER, mosfet, ROHS COMPLIANT, APAK-5, FET General Purpose Power