EMC EMB12N03H In-Stock

#EMB12N03H EMC EMB12N03H New Power Field-Effect Transistor, 25A I(D), 30V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8, EMB12N03H pictures, EMB12N03H price, #EMB12N03H supplier
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Manufacturer Part Number: EMB12N03H
Part Life Cycle Code: Contact Manufacturer
Ihs Manufacturer: EXCELLIANCE MOS CORP
Package Description: SMALL OUTLINE, R-PDSO-F5
Manufacturer: Excelliance MOS Corporation
Risk Rank: 5.71
Avalanche Energy Rating (Eas): 45 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 30 V
Drain Current-Max (ID): 25 A
Drain-source On Resistance-Max: 0.0115 Ω
FET Technology: METAL-OXIDE Semiconductor
JESD-30 Code: R-PDSO-F5
Number of Elements: 1
Number of Terminals: 5
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Min: -55 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 100 A
Surface Mount: YES
Terminal Form: FLAT
Terminal Position: DUAL
Transistor Element Material: SILICON
Power Field-Effect Transistor, 25A I(D), 30V, 0.0115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EDFN-8