#FQD2N100TM FAIRCHILD FQD2N100TM New Power mosfet, N-Channel, QFET®, 1000 V, 1.6 A, 9 Ω, DPAK, 2500-REEL, FQD2N100TM pictures, FQD2N100TM price, #FQD2N100TM supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/fqd2n100tm.html
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Manufacturer Part Number: FQD2N100TM
Brand Name: ON Semiconductor
Pbfree Code: Active
Ihs Manufacturer: ON SEMICONDUCTOR
Package Description: SMALL OUTLINE, R-PSSO-G2
Manufacturer Package Code: 369AS
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: ON Semiconductor
Risk Rank: 0.88
Avalanche Energy Rating (Eas): 160 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 1000 V
Drain Current-Max (Abs) (ID): 1.6 A
Drain Current-Max (ID): 1.6 A
Drain-source On Resistance-Max: 9 Ω
FET Technology: METAL-OXIDE Semiconductor
JEDEC-95 Code: TO-252
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Operating Temperature-Min: -55 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 50 W
Pulsed Drain Current-Max (IDM): 6.4 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin (Sn)
Terminal Form: GULL WING
Terminal Position: SINGLE
Time
Power MOSFET, N-Channel, QFET®, 1000 V, 1.6 A, 9 Ω, DPAK, 2500-REEL
Brand Name: ON Semiconductor
Pbfree Code: Active
Ihs Manufacturer: ON SEMICONDUCTOR
Package Description: SMALL OUTLINE, R-PSSO-G2
Manufacturer Package Code: 369AS
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: ON Semiconductor
Risk Rank: 0.88
Avalanche Energy Rating (Eas): 160 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 1000 V
Drain Current-Max (Abs) (ID): 1.6 A
Drain Current-Max (ID): 1.6 A
Drain-source On Resistance-Max: 9 Ω
FET Technology: METAL-OXIDE Semiconductor
JEDEC-95 Code: TO-252
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Operating Temperature-Min: -55 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 50 W
Pulsed Drain Current-Max (IDM): 6.4 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin (Sn)
Terminal Form: GULL WING
Terminal Position: SINGLE
Time
Power MOSFET, N-Channel, QFET®, 1000 V, 1.6 A, 9 Ω, DPAK, 2500-REEL