#SSW5N80A FAIRCHILD SSW5N80A New Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3, SSW5N80A pictures, SSW5N80A price, #SSW5N80A supplier
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Email: [email protected]
https://www.slw-ele.com/ssw5n80a.html
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Manufacturer Part Number: SSW5N80A
Rohs Code: No
Part Life Cycle Code: Obsolete
Ihs Manufacturer: FAIRCHILD Semiconductor CORP
Package Description: SMALL OUTLINE, R-PSSO-G2
Pin Count: 3
Manufacturer: Fairchild Semiconductor Corporation
Risk Rank: 5.92
Avalanche Energy Rating (Eas): 333 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 800 V
Drain Current-Max (Abs) (ID): 5 A
Drain Current-Max (ID): 5 A
Drain-source On Resistance-Max: 2.2 Ω
FET Technology: METAL-OXIDE Semiconductor
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e0
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 140 W
Pulsed Drain Current-Max (IDM): 20 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
Terminal Form: GULL WING
Terminal Position: SINGLE
Time
Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
Rohs Code: No
Part Life Cycle Code: Obsolete
Ihs Manufacturer: FAIRCHILD Semiconductor CORP
Package Description: SMALL OUTLINE, R-PSSO-G2
Pin Count: 3
Manufacturer: Fairchild Semiconductor Corporation
Risk Rank: 5.92
Avalanche Energy Rating (Eas): 333 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 800 V
Drain Current-Max (Abs) (ID): 5 A
Drain Current-Max (ID): 5 A
Drain-source On Resistance-Max: 2.2 Ω
FET Technology: METAL-OXIDE Semiconductor
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e0
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 140 W
Pulsed Drain Current-Max (IDM): 20 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
Terminal Form: GULL WING
Terminal Position: SINGLE
Time
Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3