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Manufacturer Part Number: 1DI300ZN-120
Package Description: Flange Mount, R-PUFM-X5
Manufacturer: Fuji
Collector Current-Max (IC): 300 A
Collector-Emitter voltage-Max: 1200 V
Configuration: Darlington, 3 transistors with built-in diode and Resistor
DC Current Gain-Min (hFE): 100
Fall Time-Max (tf): 2000 ns
JESD-30 Code: R-PUFM-X5
Number of Elements: 1
Number of Terminals: 5
Package Body Material: Plastic/Epoxy
Package Shape: Rectangular
Package Style: Flange Mount
Polarity/Channel Type: NPN
Power Dissipation Ambient-Max: 2000 W
Power Dissipation-Max (Absolute): 2000 W
Rise Time-Max (tr): 3000 ns
Subcategory: General Purpose Power Bipolar
Surface Mount: No
Terminal Position: Upper
Transistor Element Material: Silicon
Turn-off Time-Max (toff): 17000 ns
Turn-on Time-Max (ton): 3000 ns
This power bipolar Transistor, with the part number 1DI300ZN-120, is manufactured by Fuji. It is designed in a flange mount package with the JESD-30 code R-PUFM-X5. The transistor features a maximum collector current (IC) of 300 A and a maximum collector-emitter voltage of 1200 V. It is configured as a Darlington transistor with 3 transistors and also includes a built-in diode and Resistor.
The transistor has a minimum DC current gain (hFE) of 100 and a maximum fall time (tf) of 2000 ns. It has a single element and comes in a 5-pin package. The package body material is made of plastic/epoxy, and its shape is rectangular with a flange mount style. The transistor operates in NPN polarity/channel type.
It has a maximum ambient power dissipation of 2000 W and a maximum absolute power dissipation of 2000 W. The rise time (tr) is specified with a maximum of 3000 ns. It falls under the subcategory of general purpose power bipolar transistors. It is not designed for surface mount applications and has an upper terminal position. The transistor element material is silicon.