The Fuji 1DI300ZN-120 is a new IGBT module manufactured by Fuji Electric. It is designed for high-power applications and offers reliable performance. Here are some key features of the 1DI300ZN-120 IGBT module:
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High Power Handling: The module is capable of handling a maximum collector current (IC) of 300 A, making it suitable for demanding industrial applications.
Collector-Emitter voltage: It has a maximum collector-emitter voltage (VCES) of 1200 V, allowing for efficient power switching and control.
IGBT Technology: The module utilizes Insulated Gate Bipolar Transistor (IGBT) technology, which combines the advantages of both mosfet and bipolar transistors for enhanced performance.
Built-in Diode: The module incorporates a built-in diode, enabling efficient freewheeling and providing protection against reverse currents.
Compact Design: The module is designed in a compact package, allowing for easy installation and integration into various power electronics systems.