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The FUJI 7MBI40N-120 is a new IGBT (Insulated Gate Bipolar Transistor) with the following features and maximum ratings:
Features:
1.Including Brake Chopper: The IGBT is equipped with a brake chopper, which allows for efficient braking and control in applications that require it.
2.Square RBSOA: The IGBT has a square-shaped Reverse Bias Safe Operating Area (RBSOA), which ensures reliable and safe operation under reverse bias conditions.
3.Low Saturation voltage: The IGBT exhibits low saturation voltage, leading to reduced power losses and improved efficiency in high-power applications.
4.Overcurrent Limiting Function: The device incorporates an overcurrent limiting function, allowing it to handle 4 to 5 times the rated current safely.
Maximum Ratings and Characteristics (Tc=25°C unless specified otherwise):
1.Collector-Emitter Voltage Vces: 1200V – This is the maximum voltage that can be applied between the collector and emitter terminals.
2.Gate-Emitter Voltage VGES: ±20V – The allowable voltage range between the gate and emitter terminals.
3.Collector Current IC: 40A – The maximum continuous collector current that the IGBT can handle.
4.Collector Current Icp: 80A – The maximum pulsed collector current, typically for short durations.
5.Collector Power Dissipation Pc: 320W – The maximum power that the IGBT can dissipate without exceeding its thermal limits.
6.Collector-Emitter Voltage VCES: 2500V – This refers to the maximum voltage that can be applied between the collector and emitter terminals under transient conditions.
7.Operating Junction Temperature Tj: +150°C – The maximum temperature that the junction of the IGBT can reach during normal operation.
8.Storage Temperature Tstg: -40 to +125°C – The temperature range within which the IGBT can be safely stored.
9.Mounting Screw Torque: 3.5*1 N·m – The recommended torque for securing the IGBT using mounting screws.