FUJI 7MBR25NE120 In-Stock

#7MBR25NE120 FUJI 7MBR25NE120 New Insulated Gate Bipolar Transistor 25A I(C) 1200V V(BR)CES N-Channel MODULE-21, 7MBR25NE120 pictures, 7MBR25NE120 price, #7MBR25NE120 supplier
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Manufacturer Part Number: 7MBR25NE120
Part Life Cycle Code: Obsolete
Ihs Manufacturer: FUJI ELECTRIC CO LTD
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X21
Pin Count: 21
Manufacturer: Fuji Electric Co Ltd
Risk Rank: 5.84
Additional Feature: 3 PHASE DIODE RECTIFIER, BRAKE AND INVERTER AVAILABLE IN A MODULE
Case Connection: ISOLATED
Collector Current-Max (IC): 25 A
Collector-Emitter voltage-Max: 1200 V
Configuration: COMPLEX
Gate-Emitter voltage-Max: 20 V
JESD-30 Code: R-XUFM-X21
Number of Elements: 7
Number of Terminals: 21
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Application: POWER CONTROL
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 1500 ns
Turn-on Time-Nom (ton): 1200 ns
VCEsat-Max: 3.3 V
Insulated Gate Bipolar Transistor 25A I(C) 1200V V(BR)CES N-Channel MODULE-21