Fuji PD10M44OH7B06 In-Stock

#PD10M44OH7B06 Fuji PD10M44OH7B06 New IGBT Module Dual 85A 450V/500VDual, PD10M44OH7B06 pictures, PD10M44OH7B06 price, #PD10M44OH7B06 supplier
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PD10M44OH7B06 FEATURES
* Dual MOS FETs Cascaded circuit
* Prevented Body Diodes of mosfets bySBDs, and Ultra Fast Recovery DiodesConnected in Parallel
* 300KHz High Speed Switching Possible TYPICAL APPLICATIONS
* Power Supply for the Communications and the Induction Heating

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:500V

Gate-Emitter voltage VGES:±20V

Collector current IC:85A

Collector current Icp:800A

Collector power dissipation Pc:1270W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

IGBT Module Dual 85A 450V/500VDual