GaN-on-Sapphire 1200V FET model and datasheet

Transphorm, the GaN power Semiconductor specialist, has a simulation model and preliminary datasheet for its 1200V  GaN-on-Sapphire FET – TP120H070WS FET which samples in Q1 2024.

 It  indicates Transphorm’s ability to support future automotive power systems as well as threephase power systems typically used in the broad industrial, datacom, and renewables markets. GaN-on-Sapphire 1200V FET model and datasheet

These applications will benefit from the 1200 V GaN device’s higher power density and reliability along with equal or better performance atreasonable cost points.

Transphorm recently validated the GaN device’s higher performance ability in a 5 kW 900 V buck converter switching at 100 kHz.

The 1200 V GaN device achieved 98.7% efficiency, exceeding that of a similarly rated production SiC mosfet.

Vertical integration, epitaxy ownership, and patented process paired enable the company to bring to market the highest performing GaN device portfolio with four additional major differentiators: Manufacturability, Drivability, Designability, and Reliability.

Preliminary Device Model Specifications and Access

The GaN-on-Sapphire process is in volume production today in the LED market. The 1200 V technology leverages the oplatform used in Transphorm’s current device portfolio.

Key TP120H070WS device specifications include:

70mΩ RDS(on)

Normally off

Efficient bidirectional current flow

± 20 Vmax gate robustness

Low 4Vth gate drive noise immunity

Zero QRR

3-lead TO-247 package

The Verilog-A device model is recommended for use with the SIMetrix Pro v8.5 circuit Simulator. A LTSpicemodel is in development and will be released in Q4 2023. Simulation modeling allows for fast and efficient power system design validation while reducing design iterations, development time, and hardware investments.

The device model files and datasheet are available for download here:




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