#BSM100GB120DN2 Infineon BSM100GB120DN2 New IGBT: 100A1200V;IGBT Modules 1200V 100A DUAL , BSM100GB120DN2 pictures, BSM100GB120DN2 price, #BSM100GB120DN2 supplier
——————————————————————-
Email: sales@shunlongwei.com
——————————————————————-
Email: sales@shunlongwei.com
——————————————————————-
BSM100GB120DN2
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter voltage VCEO Max: 1200 V
Collector-Emitter Saturation voltage: 2.5 V
Continuous Collector Current at 25 C: 150 A
Gate-Emitter Leakage Current: 200 nA
Pd – Power Dissipation: 800 W
Package / Case: Half Bridge2
Maximum Operating Temperature: + 150 C
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
IGBT: 100A1200V;IGBT Modules 1200V 100A DUAL
Shunlongwei Inspected Every BSM100GB120DN2 Before Ship, All BSM100GB120DN2 with 6 months warranty.