Infineon BSM200GA12DN2 In-Stock

#BSM200GA12DN2 Infineon BSM200GA12DN2 New IGBT Power Module 1200V/300A/1400W, BSM200GA12DN2 pictures, BSM200GA12DN2 price, #BSM200GA12DN2 supplier
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Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: Details

Part No: BSM200GB120DN2

Configuration: Single

Collector- Emitter voltage VCEO Max: 1200 V

Collector-Emitter Saturation voltage: 2.5 V

Continuous Collector Current at 25 C: 300 A

Gate-Emitter Leakage Current: 200 nA

Pd – Power Dissipation: 1550 W

Package / Case: 62 mm

Minimum Operating Temperature: – 40°C

Maximum Operating Temperature: + 150°C

Packaging: Tray

Height: 36.5 mm

Length: 106.4 mm

technology: Si

Width: 61.4 mm

Brand: Infineon Technologies

Mounting Style: Chassis Mount

Maximum Gate Emitter voltage: 20 V

Product Type: IGBT Modules

IGBT Power Module 1200V/300A/1400W

Shunlongwei Inspected Every BSM200GA12DN2 Before Ship, All BSM200GA12DN2 with 6 months warranty.