Introducing the Infineon BSM50GD120DN2E3226 Silicon Modules, a product category offered by Infineon, a renowned manufacturer. These modules are designed with hex configuration, providing excellent performance for various applications. Here are some key specifications of the product:
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- Manufacturer: Infineon
- Product Category: IGBT Modules
- Collector-Emitter voltage (VCEO) Max: 1200V
- Collector-Emitter Saturation voltage: 2.5V
- Continuous Collector Current at 25°C: 50A
- Gate-Emitter Leakage Current: 200nA
- Power Dissipation (Pd): 350W
- Package/Case: EconoPACK 2
- Maximum Operating Temperature: +150°C
- Packaging: Tray
- Height: 17mm
- Length: 107.5mm
- Technology: Si (Silicon)
- Width: 45.5mm
- Mounting Style: Chassis Mount
- Maximum Gate Emitter Voltage: 20V
These N-CH (N-channel) IGBT modules are suitable for a wide range of applications that require high power and efficient switching capabilities.