Infineon BSM50GD120DN2G In-Stock

#BSM50GD120DN2G Infineon BSM50GD120DN2G New 50A/1200V/IGBT/6U; IGBT Modules 1200V 50A 3-PHASE , BSM50GD120DN2G pictures, BSM50GD120DN2G price, #BSM50GD120DN2G supplier
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https://www.slw-ele.com/bsm50gd120dn2g.html

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Manufacturer: Infineon

Product Category: IGBT Modules

RoHS: No

Brand: Infineon Technologies

Product: IGBT Silicon Modules

Configuration: Hex

Collector- Emitter voltage VCEO Max: 1200 V

Collector-Emitter Saturation voltage: 2.5 V

Continuous Collector Current at 25 C: 78 A

Gate-Emitter Leakage Current: 200 nA

Pd – Power Dissipation: 400 W

Package / Case: EconoPACK 3A

Maximum Operating Temperature: + 150 C

Maximum Gate Emitter voltage: 20 V

Minimum Operating Temperature: – 40 C

Mounting Style: Screw

Factory Pack Quantity: 10

50A/1200V/IGBT/6U; IGBT Modules 1200V 50A 3-PHASE

Shunlongwei Inspected Every BSM50GD120DN2G Before Ship, All BSM50GD120DN2G with 6 months warranty.