Infineon BSM75GAL120DN2 In-Stock

#BSM75GAL120DN2 Infineon BSM75GAL120DN2 New Insulated Gate Bipolar Transistor 105A I(C) 1200V V(BR)CES N-Channel HALF BRIDGE GAL 1 7 PIN, BSM75GAL120DN2 pictures, BSM75GAL120DN2 price, #BSM75GAL120DN2 supplier
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Manufacturer Part Number: BSM75GAL120DN2
Pbfree Code: Yes
Part Life Cycle Code: Not Recommended
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: HALF BRIDGE GAL 1, 7 PIN
Pin Count: 7
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Case Connection: ISOLATED
Collector Current-Max (IC): 105 A
Collector-Emitter voltage-Max: 1200 V
Configuration: SINGLE WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X7
Number of Elements: 1
Number of Terminals: 7
Operating Temperature-Max: 150 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 625 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Position: UPPER

Insulated Gate Bipolar Transistor 105A I(C) 1200V V(BR)CES N-Channel HALF BRIDGE GAL 1 7 PIN