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Introducing the new IGBT (Insulated Gate Bipolar Transistor) module from Infineon, the BSM75GD120DN2. This advanced module offers impressive features and specifications for various high-power applications. Here are some key details about this module:
Model: BSM75GD120DN2
Manufacturer: Infineon Technologies
IGBT Module Type: Dual IGBT
Maximum Collector-Emitter voltage (Vces): Typically 1200V
Maximum Continuous Collector Current (IC): Typically 75A per IGBT
Maximum Peak Collector Current (ICP): Typically 300A per IGBT
Total Power Dissipation (Ptot): Typically 700W per IGBT
Gate-Emitter voltage (VGES): ±20V
Operating Temperature: -40°C to +150°C
Weight: Approximately 150g
The Infineon BSM75GD120DN2 IGBT module is designed to handle high power and high current applications. It consists of dual IGBTs, allowing for more flexibility in circuit design and power handling. The module is suitable for various industrial applications such as motor drives, power converters, and renewable energy systems.