#FF150R12KS4 Infineon FF150R12KS4 New IGBT Modules 1200V 150A DUAL, FF150R12KS4 pictures, FF150R12KS4 price, #FF150R12KS4 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Product Category:IGBT Modules
Manufacturer: Infineon
RoHS: YES
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter voltage VCEO Max: 1200 V
Collector-Emitter Saturation voltage: 3.2 V
Continuous Collector Current at 25 C: 225 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 1.25 kW
Package / Case: 62 mm
Maximum Operating Temperature: + 125 C
Brand: Infineon Technologies
Height: 30.5 mm
Length: 106.4 mm
Maximum Gate Emitter voltage: +/- 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10
Width: 61.4 mm