Infineon FP15R12KE3 New IGBT Module

Update: November 22, 2023 Tags:1600v25afp15rIGBTinfineon

Sales Email: sales@shunlongwei.com

Part Number: FP15R12KE3
Manufacturer: Infineon
Product Category: IGBT Modules
Product: IGBT Silicon Modules
Configuration: Hex
Collector-Emitter voltage (VCEO) Max: 1600 V
Continuous Collector Current at 25°C: 25 A
Continuous Collector Current at Rectifier Output (IRMSmax): 36 A
Maximum Operating Temperature: +125°C
Package/Case: EASY2
Brand: Infineon Technologies
Maximum Gate Emitter voltage: +/- 20 V
Total Power Dissipation at TC=25°C (Ptot): 89 W
Minimum Operating Temperature: -40°C
Mounting Style: Screw
Factory Pack Quantity: 20
Description: IGBT Modules, N-Channel, 1.2 kV, 27 A; 15 A/1200V/PIM

The FP15R12KE3 is an IGBT module manufactured by Infineon. It is part of the IGBT Silicon Modules product category. The module features a hex configuration and has a maximum collector-emitter voltage (VCEO) of 1600 V. It can sustain a continuous collector current of 25 A at 25°C and 36 A at the rectifier output. The module has a maximum operating temperature of +125°C and is packaged in an EASY2 case.

Infineon Technologies is the brand behind this product, known for its high-quality Semiconductor solutions. The FP15R12KE3 module has a maximum gate-emitter voltage of +/- 20 V and a total power dissipation (Ptot) of 89 W at TC=25°C. It can operate in a wide temperature range, with a minimum operating temperature of -40°C.

The module is designed to be mounted using screws and comes in a factory pack quantity of 20. It is suitable for various applications that require N-channel IGBT modules with a voltage rating of 1.2 kV and current ratings of 27 A and 15 A at 1200 V and PIM specifications.

Please note that the additional information you provided regarding the Infineon FP15R12KE3G appears to be unrelated to the described IGBT module.