Infineon Technologies. It is specifically designed for high-power switching applications. Here are some key specifications and features of the FP15R12YT3:
Manufacturer: Infineon Technologies
Part Number: FP15R12YT3
Power Module Type: IGBT (Insulated Gate Bipolar Transistor)
Maximum Collector Current (IC): 15A
Collector-Emitter voltage (VCE): 1200V
Total Power Dissipation (Ptot): 150W
Gate-Emitter voltage (VGES): +/-20V
Temperature Range: -40 to 150°C
Weight: Not specified
Some notable features of the FP15R12YT3 include:
High voltage capability for handling high-power applications.
Low conduction and switching losses for improved efficiency.
Compact and robust design for reliable operation.
Suitable for various applications including motor control, power supplies, and inverters.