Infineon IPA65R380E6 In-Stock

#IPA65R380E6 Infineon IPA65R380E6 New Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN, IPA65R380E6 pictures, IPA65R380E6 price, #IPA65R380E6 supplier
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Manufacturer Part Number: IPA65R380E6
Pbfree Code: Yes
Part Life Cycle Code: Not Recommended
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Part Package Code: TO-220AB
Package Description: FLANGE MOUNT, R-PSFM-T3
Pin Count: 3
Manufacturer: Infineon Technologies AG
Risk Rank: 5.64
Avalanche Energy Rating (Eas): 215 mJ
Case Connection: ISOLATED
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 650 V
Drain Current-Max (Abs) (ID): 10.6 A
Drain-source On Resistance-Max: 0.38 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-220AB
JESD-30 Code: R-PSFM-T3
Number of Elements: 1
Number of Terminals: 3
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 31 W
Pulsed Drain Current-Max (IDM): 29 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: NO
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Time
Power Field-Effect Transistor, 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN