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Description: Infineon IGBT MOD™ Modules are specifically engineered for high frequency applications, supporting 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module comprises a half-bridge configuration featuring two IGBT Transistors, with each Transistor equipped with a reverse-connected super-fast recovery free-wheel diode. The design ensures complete isolation of all components and interconnects from the heat sinking baseplate, simplifying system assembly and thermal management.
Key Features:
Low ESW(off)
Discrete Super-Fast Recovery Free-Wheel Diode
Isolated Baseplate for Easy Heat Sinking
Applications:
Power Supplies
Induction Heating
Welders
Absolute Maximum Ratings at Tj = 25°C, unless otherwise specified:
Collector-Emitter voltage (VGE = 0V): VCES = 1200 Volts
Gate-Emitter voltage (VCE = 0V): VGES = ±20 Volts
Collector Current (DC, TC = 125°C)2,4: IC = 400 Amperes
Collector Current (Pulse, Repetitive)3: ICRM = 800 Amperes Total Power Dissipation (TC = 25°C)2,*4: Ptot = 2450 Watts
Emitter Current2IE11000: Amperes
Emitter Current (Pulse, Repetitive)3: IERM800 Amperes
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute): Visol = 2500 Volts
Maximum Junction Temperature: Tj(max) = 175 °C
Maximum Case Temperature: TC(max) = 125 °C
Operating Junction Temperature: Tj(op) = -40 to +150 °C
Storage Temperature: Tstg = -40 to +125 °C