International Rectifier IRF6723M2DTR1P In-Stock

Datasheets:IRF6723M2DTR(1)PbFProduct Photos:IRF6723M2DTR1PProduct Training Modules High voltage Integrated Circuits (HVIC Gate Drivers)Design Resources:IRF6723M2DTR1P Saber ModelIRF6723M2DTR1P Spice ModelPCN Assembly/Origin:DirectFET Backend Wafer Processing 23/Oct/2013Standard Package:1,000Category:Discrete Semiconductor ProductsFamily:FETs – ArraysSeries:HEXFET®Packaging:Tape & Reel (TR)FET Type:2 N-Channel (Dual)FET Feature:Logic Level GateDrain to Source Voltage (Vdss):30VCurrent – Continuous Drain (Id) @ 25° C:15ARds On (Max) @ Id, Vgs:6.6 mOhm @ 15A, 10VVgs(th) (Max) @ Id:2.35V @ 25µAGate Charge (Qg) @ Vgs:14nC @ 4.5VInput Capacitance (Ciss) @ Vds:1380pF @ 15VPower – Max:2.7WMounting Type:Surface MountPackage / Case:DirectFET #IRF6723M2DTR1P International Rectifier IRF6723M2DTR1P New Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,, IRF6723M2DTR1P pictures, IRF6723M2DTR1P price, #IRF6723M2DTR1P supplier
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Manufacturer Part Number: IRF6723M2DTR1PBF
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Package Description: ,
Manufacturer: Infineon Technologies AG
Risk Rank: 5.84
Drain Current-Max (Abs) (ID): 47 A
FET Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 175 °C
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 25 W
Subcategory: FET General Purpose Power
Surface Mount: YES
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,