IRL2910PBF
#IRL2910PBF International Rectifier IRL2910PBF New IRL2910PBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3; IRL2910PBF , IRL2910PBF pictures, IRL2910PBF price, #IRL2910PBF supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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Manufacturer Part Number: IRL2910PBF
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: Infineon TECHNOLOGIES AG
Package Description: FLANGE MOUNT, R-PSFM-T3
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 0.75
Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas): 520 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 100 V
Drain Current-Max (Abs) (ID): 48 A
Drain Current-Max (ID): 55 A
Drain-source On Resistance-Max: 0.03 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-220AB
JESD-30 Code: R-PSFM-T3
Number of Elements: 1
Number of Terminals: 3
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 175 °C
Operating Temperature-Min: -55 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 150 W
Pulsed Drain Current-Max (IDM): 190 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: NO
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Time
Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: Infineon TECHNOLOGIES AG
Package Description: FLANGE MOUNT, R-PSFM-T3
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 0.75
Additional Feature: AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas): 520 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 100 V
Drain Current-Max (Abs) (ID): 48 A
Drain Current-Max (ID): 55 A
Drain-source On Resistance-Max: 0.03 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-220AB
JESD-30 Code: R-PSFM-T3
Number of Elements: 1
Number of Terminals: 3
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 175 °C
Operating Temperature-Min: -55 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 150 W
Pulsed Drain Current-Max (IDM): 190 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: NO
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Time
Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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