IR IRF7329 In-Stock

IR   IRF7329  In-Stock

IRF7329

#IRF7329 IR IRF7329 New IRF7329 Small Signal Field-Effect Transistor, 9.2A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8; IRF7329 , IRF7329 pictures, IRF7329 price, #IRF7329 supplier
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Manufacturer Part Number: IRF7329
Rohs Code: No
Part Life Cycle Code: Obsolete
Ihs Manufacturer: Infineon TECHNOLOGIES AG
Package Description: SMALL OUTLINE, R-PDSO-G8
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.77
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 12 V
Drain Current-Max (ID): 9.2 A
Drain-source On Resistance-Max: 0.017 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PDSO-G8
JESD-609 Code: e0
Moisture Sensitivity Level: 1
Number of Elements: 2
Number of Terminals: 8
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 245
Polarity/Channel Type: P-CHANNEL
Qualification Status: Not Qualified
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
Terminal Form: GULL WING
Terminal Position: DUAL
Time
Small Signal Field-Effect Transistor, 9.2A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8