IR IRF7506 In-Stock

#IRF7506 IR IRF7506 New Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8, IRF7506 pictures, IRF7506 price, #IRF7506 supplier
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Manufacturer Part Number: IRF7506TRPBF
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Package Description: SMALL OUTLINE, R-PDSO-G8
Manufacturer: Infineon Technologies AG
Risk Rank: 1.02
Additional Feature: LOGIC LEVEL COMPATIBLE
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 30 V
Drain Current-Max (ID): 1.7 A
Drain-source On Resistance-Max: 0.27 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PDSO-G8
Moisture Sensitivity Level: 1
Number of Elements: 2
Number of Terminals: 8
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: P-CHANNEL
Pulsed Drain Current-Max (IDM): 9.6 A
Surface Mount: YES
Terminal Form: GULL WING
Terminal Position: DUAL
Time
Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8