IXYS IXFN55N50 In-Stock

#IXFN55N50 IXYS IXFN55N50 New Discrete Semiconductor Modules 55 Amps 500V 0.08 Rds, IXFN55N50 pictures, IXFN55N50 price, #IXFN55N50 supplier
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Manufacturer: IXYS

Product Category: Discrete Semiconductor Modules

RoHS: Details

Vgs – Gate-Source voltage: – 20 V, + 20 V

Mounting Style: Chassis Mount

Package / Case: SOT-227-4

Minimum Operating Temperature: – 55 C

Maximum Operating Temperature: + 150 C

Series: HiPerFET

Packaging: Tube

Configuration: Single

Technology: Si

Brand: IXYS

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Fall Time: 45 ns

Id – Continuous Drain Current: 55 A

Pd – Power Dissipation: 625 W

Product Type: Discrete Semiconductor Modules

Rds On – Drain-Source Resistance: 90 mOhms

Rise Time: 60 ns

Factory Pack Quantity: 10

Subcategory: Discrete Semiconductor Modules

Tradename: HyperFET

Typical Turn-Off Delay Time: 120 ns

Typical Turn-On Delay Time: 45 ns

Vds – Drain-Source Breakdown Voltage: 500 V

Discrete Semiconductor Modules 55 Amps 500V 0.08 Rds

Shunlongwei Inspected Every IXFN55N50 Before Ship, All IXFN55N50 with 6 months warranty.