IXYS MUBW35-12A7 In-Stock
MUBW35-12A7 Video
Sell MUBW35-12A7, IXYS MUBW35-12A7 New Stock, MUBW35-12A7 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24; #MUBW35_12A7
Email: sales@shunlongwei.com
IXYS MUBW35-12A7 is a power diode module designed for use in various industrial applications such as welding & battery charging.
Electrical Specifications:
Maximum Average Forward Current: 35 A
Repetitive Peak Reverse voltage: 1200 V
Maximum Surge Current: 500 A
Maximum Forward Voltage Drop: 1.85 V at 35 A
Maximum Reverse Recovery Time: 200 ns
Maximum Reverse Recovery Current: 30 A
Mechanical Specifications:
Weight: 130 g
Module Type: Standard Diode
Package Style: MiniBLOC
Mounting Style: Screw
Mounting Torque: 3.5 Nm
Operating Temperature: -40 to +125 °C
This MUBW35-12A7 IGBT module designed with high power density, low profile, & high surge current capability. Its MiniBLOC package style easy to install and replace, while its screw mounting style ensures secure and reliable mounting.