Microsemi Power Products Group APT25GR120SSCD10 In-Stock

Microsemi Power Products Group APT25GR120SSCD10 In-Stock

Datasheets:APT25GR120(B,S)SCD10Standard Package:31Category:Discrete Semiconductor ProductsFamily:IGBTs – SingleSeries:-Packaging:TubeIGBT Type:NPTVoltage – Collector Emitter Breakdown (Max):1200VVce(on) (Max) @ Vge, IC:3.2V @ 15V, 25ACurrent – Collector (Ic) (Max):75ACurrent – Collector Pulsed (Icm):100APower – Max:521WSwitching Energy:434µJ (on), 466µJ (off)Input Type:StandardGate Charge:203nCTd (on/off) @ 25°C:16ns/122nsTest Condition:600V, 25A, 4.3 Ohm, 15VReverse Recovery Time (trr):-Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AAMounting Type:Surface MountSupplier Device Package:D3PakDynamic Catalog:Standard IGBTs #APT25GR120SSCD10 Microsemi Power Products Group APT25GR120SSCD10 New Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel,, APT25GR120SSCD10 pictures, APT25GR120SSCD10 price, #APT25GR120SSCD10 supplier
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Manufacturer Part Number: APT25GR120SSCD10
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: MICROSEMI CORP
Package Description: ,
Manufacturer: Microsemi Corporation
Risk Rank: 5.83
Collector Current-Max (IC): 75 A
Collector-Emitter voltage-Max: 1200 V
Gate-Emitter Thr Voltage-Max: 6.5 V
Gate-Emitter Voltage-Max: 30 V
Operating Temperature-Max: 150 °C
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 521 W
Subcategory: Insulated Gate BIP Transistors
Surface Mount: YES
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel,