#CM1200HC-66H Mitsubishi CM1200HC-66H New Mitsubishi 3rd-Version HVIGBT (High voltage Insulated Gate Bipolar Transistor) Modules 1200A/3300V/IGBT/1U;, #CM1200HC_66H
CM1200HC-66H Features
● IC………………………………………………………. 1200A
● VCES ………………………………………………. 3300V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
VCES Collector-emitter voltage VGE = 0V, Tj = 25°C 3300V
VGES Gate-emitter voltage VCE = 0V, Tj = 25°C ±20 V
IC Collector current TC = 100°C 1200A
ICM Collector current Pulse 2400A
PC (Note 3) Maximum power dissipation TC = 25°C, IGBT part 14700W
Tj Junction temperature –40 ~ +150 °C
Top Operating temperature –40 ~ +125 °C
Tstg Storage temperature –40 ~ +125 °C
Viso Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1min. 6000V
tpsc Maximum short circuit pulse width VCC = 2200V, VCES ≤ 3300V, VGE = 15V Tj = 125°C 10µs
ELECTRICAL CHARACTERISTICS
ICES Collector cut-off current VCE = VCES, VGE = 0V, Tj = 25°C 15 mA
VGE(th) Gate-emitter threshold voltage IC = 120mA, VCE = 10V, Tj = 25°C 5.0~7.0V
IGES Gate leakage curren VGE = VGES, VCE = 0V, Tj = 25°C 0.5 mA
Cies Input capacitance VCE = 10V, f = 100kHz 180 nF
Qg Total gate charge VCC = 1650V, IC = 1200A, VGE = 15V, Tj = 25°C 8.6 µC
Mounting torque M6 : Mounting screw 3.0~6.0 mm
Mass 1.5kg