#CM2400HC-34N Mitsubishi CM2400HC-34N New 4th-Version HVIGBT (High voltage Insulated Gate Bipolar Transistor) Modules, CM2400HC-34N pictures, CM2400HC-34N price, #CM2400HC-34N supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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CM2400HC-34N
IC ……………………………………………………….2400A
VCES ……………………………………………….1700V
Insulated Type
1-element in a Pack
AISiC Baseplate
Trench Gate IGBT : CSTBT™
Soft Reverse Recovery Diode
IC ……………………………………………………….2400A
VCES ……………………………………………….1700V
Insulated Type
1-element in a Pack
AISiC Baseplate
Trench Gate IGBT : CSTBT™
Soft Reverse Recovery Diode
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1700V
Gate-Emitter voltage VGES:±20V
Collector current IC:2400A
Collector current Icp:4800A
Collector power dissipation Pc:13100W
Collector-Emitter voltage VCES:4000V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules