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The CM1000DXL-24S is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Mitsubishi Electric.
Power Rating: The CM1000DXL-24S is rated for a maximum collector current (IC) :1000A.
voltage Rating: It has a maximum collector-emitter voltage (VCE) rating of 1200V, allowing it to handle high voltage levels.
IGBT Technology: The module utilizes advanced IGBT technology, which combines the advantages of both mosfet and bipolar junction Transistor (BJT) to achieve high switching speeds and low conduction losses.
Low Saturation Voltage: The CM1000DXL-24S exhibits low saturation voltage, resulting in reduced power losses during conduction.
High Switching Frequency: It is designed to operate at high switching frequencies, enabling efficient and rapid switching of the IGBTs.
Built-in Protection Features: The module incorporates various protection features, with short-circuit protection, temperature monitoring, and under-voltage lockout (UVLO), to ensure safe and reliable operation.
Package Type: The CM1000DXL-24S is packaged in a module format, which includes the IGBT chips, gate drive circuitry, and other necessary components. This package provides ease of installation and thermal management.
Applications: This IGBT module is commonly used in industrial applications such as motor drives, power converters, renewable energy systems, traction systems, and other high-power electronic systems.
The CM1000DXL-24S offers high power handling capability, efficient switching performance, and robust protection features, making it suitable for demanding applications that require reliable and efficient power control.