#PM100RSE120 Mitsubishi PM100RSE120 New Mitsubishi module 100A / 1200V, PM100RSE120 pictures, PM100RSE120 price, #PM100RSE120 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
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PM100RSE120 FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1μm fine rule process.
b) Using new Diode which is designed to get soft reverserecovery characteristics.
•3φ 100A, 1200V Current-sense IGBT for 15kHz switching
• 50A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 18.5/22kW class inverter application
a) Adopting new 4th generation planar IGBT chip, which per-formance is improved by 1μm fine rule process.
b) Using new Diode which is designed to get soft reverserecovery characteristics.
•3φ 100A, 1200V Current-sense IGBT for 15kHz switching
• 50A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 18.5/22kW class inverter application
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current IC:100A
Collector current Icp:200A
Collector power dissipation Pc:595W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Mitsubishi module 100A / 1200V