Mitsubishi PM100RSE120 New IGBT module
The Mitsubishi PM100RSE120 is a high-performance IGBT module featuring several advanced features and characteristics.
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Here are the key features of the PM100RSE120 module:
- Fourth-Generation Planar IGBT Chip: The module utilizes a new 4th generation planar IGBT chip, manufactured using a fine 1μm rule process. This technology enhances the performance and efficiency of the module.
- Soft Reverse-Recovery Diode: The module incorporates a new diode designed to achieve soft reverse-recovery characteristics. This diode ensures smooth switching transitions and minimizes voltage spikes during operation.
- Current-Sense IGBT: It is a Three-Phase 100A, 1200V current-sense IGBT module specifically designed for 15kHz switching applications. This makes it suitable for various power electronics applications such as motor control and power supplies.
- Current-Sense Regenerative Brake IGBT: The module also includes a 50A, 1200V current-sense IGBT specifically designed for regenerative brake applications. This feature allows for efficient energy recovery in braking systems.
- Monolithic Gate Drive & Protection Logic: The PM100RSE120 integrates a monolithic gate drive circuitry along with protection logic. This design simplifies the module’s installation and wiring while providing essential protection functions for over-current, short-circuit, over-temperature, and under-voltage conditions.
- Detection, Protection & Status Indication Circuits: The module features circuits for detecting and protecting against over-current, short-circuit, over-temperature, and under-voltage conditions. Additionally, it provides status indication to facilitate monitoring and diagnostics.
- Low Acoustic Noise: The module is designed to operate silently, making it suitable for 18.5/22kW class inverter applications where low noise is desired.
Here are the maximum ratings and characteristics of the PM100RSE120 module:
- Collector-Emitter Voltage (Vces): 1200V
- Gate-Emitter Voltage (VGES): ±20V
- Collector Current (IC): 100A
- Collector Current (Icp): 200A
- Collector Power Dissipation (Pc): 595W
- Collector-Emitter Voltage (VCES): 2500V
- Operating Junction Temperature (Tj): +150°C
- Storage Temperature (Tstg): -40 to +125°C
- Mounting Screw Torque: 3.5 * 1 N·m
These specifications highlight the module’s voltage, current, power dissipation, and temperature limits for safe and reliable operation.