#PM30CSJ060 Mitsubishi PM30CSJ060 New PM30CSJ060 IGBT Array & Module Transistor 30A/600V 47.6W DIP; PM30CSJ060 , PM30CSJ060 pictures, PM30CSJ060 price, #PM30CSJ060 supplier
——————————————————————-
Email: sales@shunlongwei.com
——————————————————————-
——————————————————————-
Email: sales@shunlongwei.com
PM30CSJ060 Description:
Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to
20kHz. Built-in control Circuits provide optimum gate drive and protection for the IGBT and free-wheel
diode power devices.
Features:
. Complete Output Power Circuit
. Gate Drive circuit
. Protection Logic
– Short circuit
– Over Current
– Over Temperature
– Under voltage
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Power Device Junction Temperature Tj -20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC -20 to 100 °C
Mounting Torque, M4 Mounting Screws — 0.98 ~ 1.47 N · m
Module Weight (Typical) — 60 Grams
Supply voltage Protected by OC and SC (VD = 13.5 – 16.5V, Inverter Part) VCC(prot.) 400 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts
Collector Current, (TC = 25°C) IC 10 Amperes
Peak Collector Current, (TC = 25°C) ICP 20 Amperes
Supply Voltage (Applied between P – N) VCC 450 Volts
Supply Voltage, Surge (Applied between P – N) VCC(surge) 500 Volts
Collector Dissipation PC 39 Watts
IGBT Array & Module Transistor 30A/600V 47.6W DIP
Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to
20kHz. Built-in control Circuits provide optimum gate drive and protection for the IGBT and free-wheel
diode power devices.
Features:
. Complete Output Power Circuit
. Gate Drive circuit
. Protection Logic
– Short circuit
– Over Current
– Over Temperature
– Under voltage
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Power Device Junction Temperature Tj -20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC -20 to 100 °C
Mounting Torque, M4 Mounting Screws — 0.98 ~ 1.47 N · m
Module Weight (Typical) — 60 Grams
Supply voltage Protected by OC and SC (VD = 13.5 – 16.5V, Inverter Part) VCC(prot.) 400 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts
Collector Current, (TC = 25°C) IC 10 Amperes
Peak Collector Current, (TC = 25°C) ICP 20 Amperes
Supply Voltage (Applied between P – N) VCC 450 Volts
Supply Voltage, Surge (Applied between P – N) VCC(surge) 500 Volts
Collector Dissipation PC 39 Watts
IGBT Array & Module Transistor 30A/600V 47.6W DIP