The Mitsubishi PM75CSE120 features:
a) Utilizes a new 4th generation planar IGBT chip with enhanced performance through a 1μm fine rule process.
b) Incorporates a new diode designed to achieve soft reverse-recovery characteristics.
Sales Email: sales@shunlongwei.com
Key Specifications:
- 3-phase, 75A, 1200V current-sense IGBT suitable for 15kHz switching.
- Integrated monolithic gate drive and protection logic.
- Includes detection, protection, and status indication circuits for over-current, short-circuit, over-temperature, and under-voltage conditions.
- Ideal for noiseless 11/15kW class inverter applications.
Maximum Ratings and Characteristics:
- Collector-Emitter voltage (Vces): 1200V
- Gate-Emitter Voltage (VGES): ±20V
- Collector Current (IC): 75A
- Collector Current (Icp): 150A
- Collector Power Dissipation (Pc): 416W
- Collector-Emitter Voltage (VCES): 2500V
- Operating Junction Temperature (Tj): +150°C
- Storage Temperature (Tstg): -40 to +125°C
- Recommended Mounting Screw Torque: M5, 2.5~3.5 N·m
- Weight (Typical): 560g