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The Mitsubishi QM300HA-2H is a power module designed for high-power applications. Here are some key details about this module:
Model: QM300HA-2H
Manufacturer: Mitsubishi
Power Module Type: IGBT (Insulated Gate Bipolar Transistor)
Maximum Collector-Emitter voltage (Vces): Typically 1200V
Maximum Continuous Collector Current (IC): Typically 300A
Maximum Peak Collector Current (ICP): Typically 600A
Total Power Dissipation (Ptot): Typically 2120W
Gate-Emitter voltage (VGES): ±20V
Operating Temperature: -40°C to +150°C
Weight: Approximately 300g
The Mitsubishi QM300HA-2H power module is designed to handle high power and high current applications. It utilizes IGBT technology, which combines the advantages of both bipolar junction transistors and MOSFETs, providing high voltage capability and fast switching speed.