Mitsubishi QM30TB1-H In-Stock

#QM30TB1-H Mitsubishi QM30TB1-H New Mitsubishi IGBT POWER Transistor MODULE , QM30TB1-H pictures, QM30TB1-H price, #QM30TB1-H supplier
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Options

.also available with powerfull chopper. For characteristics please refer to Inverter IGBT

1)Theatsink=25°C, unless otherwise specified

2)CAL=Controlled Axial Lifetime technology(soft and fast recovery)

.For diagrams of the Chopper IGBT please fefer to QM30TB1-H

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1000V

Gate-Emitter voltage VGES:±20V

Collector current IC:50A

Collector power dissipation Pc:400W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mitsubishi IGBT POWER Transistor MODULE

Shunlongwei Inspected Every QM30TB1-H Before Ship, All QM30TB1-H with 6 months warranty.