NXP BLF6G10LS-135R In-Stock

Datasheets:BLF6G10(LS)-135R SOT502 BPCN Assembly Origin:RF Power Transistors Transfer PCN Packaging:Date Code Extended Standard Package:20 Category:Discrete Semiconductor Products Family:RF FETsSeries:-Packaging:TrayTransistor Type:LDMOSFrequency:871.5MHz ~ 891.5MHzGain:21dB voltage – Test:28 VCurrent Rating:32A Noise Figure:-Current – Test:950mA Power – Output:26.5W Voltage – Rated:65V Package / Case:SOT-502BSupplier Device Package:SOT 502B Dynamic Catalog:RF HEMT HFET LDMOS FETsOther #BLF6G10LS-135R NXP BLF6G10LS-135R New RF MOSFET Transistors LDMOS TNS , BLF6G10LS-135R pictures, BLF6G10LS-135R price, #BLF6G10LS-135R supplier
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Product Category: RF mosfet Transistors BLF6G10LS-135R

Manufacturer: NXP

RoHS: RoHS Compliant YES

Transistor Polarity: N-Channel

Id – Continuous Drain Current: 32 A

Vds – Drain-Source Breakdown Voltage: 65 V

Rds On – Drain-Source Resistance: 100 mOhms

technology: Si

Maximum Operating Temperature: + 150 C

Mounting Style: SMD/SMT

Package / Case: SOT502B

Packaging: Tube

Brand: NXP Semiconductors

Channel Mode: Enhancement

Configuration: Single

Height: 4.72 mm

Length: 20.7 mm

Minimum Operating Temperature: – 65 C

Factory Pack Quantity: 20

Type: RF Power MOSFET

Vgs – Gate-Source Voltage: 13 V

Width: 9.91 mm

Part # Aliases: BLF6G10LS-135R,112

RF MOSFET Transistors LDMOS TNS

Shunlongwei Inspected Every BLF6G10LS-135R Before Ship, All BLF6G10LS-135R with 6 months warranty.