NXP Semiconductors PDTC123EM,315 In-Stock

Datasheets:PDTC123EProduct Photos:SC-101 SOT-883Standard Package:10,000Category:Discrete Semiconductor ProductsFamily:Transistors (BJT) – Single, Pre-BiasedSeries:-Packaging:Tape & Reel (TR)Transistor Type:NPN – Pre-BiasedCurrent – Collector (IC) (Max):100mAVoltage – Collector Emitter Breakdown (Max):50VResistor – Base (R1) (Ohms):2.2kResistor – Emitter Base (R2) (Ohms):2.2kDC Current Gain (hFE) (Min) @ IC, Vce:30 @ 20mA, 5VVce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mACurrent – Collector Cutoff (Max):1µAFrequency – Transition:-Power – Max:250mWMounting Type:Surface MountPackage / Case:SC-101, SOT-883Supplier Device Package:SOT-883Other Names:568-2152-2934058288315PDTC123EM T/R #PDTC123EM,315 NXP Semiconductors PDTC123EM,315 New TRANS PREBIAS NPN 250MW SOT883, PDTC123EM,315 pictures, PDTC123EM,315 price, #PDTC123EM,315 supplier
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TRANS PREBIAS NPN 250MW SOT883