Rohm and Ancora Semiconductors develop GaN HEMTs
Ancora started in 2010 as an R&D project in power electronics at Delta Electronics and a laboratory was set up for it in 2012.
In 2022 the lab was spun off as a fabless Semiconductor company based in Taiwan backed with $15 million by Rohm, Delta, Sino-American Silicon and UPI Semiconductors.
The GNP1070TC-Z and GNP1150TCA-Z devices developedwith Rohm claim industry-leading performance in terms of RDS(ON) × Ciss / RDS(ON) × Coss, a figure of merit for GaN HEMTs.
At the same time, a built-in ESD protection element improves electrostatic breakdown resistance up to 3.5kV, leading to higher application reliability.
GaN HEMTs’ high-speed switching characteristics also contribute to greater miniaturization of peripheral components.
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