ROHM RQ3E150BN In-Stock

#RQ3E150BN ROHM RQ3E150BN New Power Field-Effect Transistor, 15A I(D), 30V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN, RQ3E150BN pictures, RQ3E150BN price, #RQ3E150BN supplier
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Manufacturer Part Number: RQ3E150BNTB
Rohs Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: ROHM CO LTD
Package Description: SMALL OUTLINE, R-PDSO-F5
ECCN Code: EAR99
Manufacturer: ROHM Semiconductor
Risk Rank: 1.65
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 30 V
Drain Current-Max (ID): 15 A
Drain-source On Resistance-Max: 0.0074 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PDSO-F5
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 5
Operating Mode: ENHANCEMENT MODE
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Pulsed Drain Current-Max (IDM): 60 A
Surface Mount: YES
Terminal Form: FLAT
Terminal Position: DUAL
Time
Power Field-Effect Transistor, 15A I(D), 30V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN