SAMSUNG K4D551638F-TC40 In-Stock

Update: March 6, 2024 Tags:ictechnology

#K4D551638F-TC40 SAMSUNG K4D551638F-TC40 New DDR DRAM, 16MX16, CMOS, PDSO66,, K4D551638F-TC40 pictures, K4D551638F-TC40 price, #K4D551638F-TC40 supplier
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Manufacturer Part Number: K4D551638F-TC40
Pbfree Code: No
Part Life Cycle Code: Obsolete
Ihs Manufacturer: SAMSUNG Semiconductor INC
Package Description: TSSOP, TSSOP66,.46
Manufacturer: Samsung Semiconductor
Risk Rank: 5.92
Clock Frequency-Max (fCLK): 250 MHz
I/O Type: COMMON
Interleaved Burst Length: 2,4,8
JESD-30 Code: R-PDSO-G66
Memory Density: 268435456 bit
Memory IC Type: DDR DRAM
Memory Width: 16
Moisture Sensitivity Level: 1
Number of Terminals: 66
Number of Words: 16777216 words
Number of Words Code: 16000000
Operating Temperature-Max: 65 °C
Organization: 16MX16
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Code: TSSOP
Package Equivalence Code: TSSOP66,.46
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel): 225
Power Supplies: 2.6 V
Qualification Status: Not Qualified
Refresh Cycles: 8192
Sequential Burst Length: 2,4,8
Subcategory: DRAMs
Supply Current-Max: 0.41 mA
Supply voltage-Nom (Vsup): 2.6 V
Surface Mount: YES
Technology: CMOS
Temperature Grade: COMMERCIAL
Terminal Form: GULL WING
Terminal Pitch: 0.635 mm
Terminal Position: DUAL
Time
DDR DRAM, 16MX16, CMOS, PDSO66,