#K7B803625B-QC75 SAMSUNG K7B803625B-QC75 New Cache SRAM, 256KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100, K7B803625B-QC75 pictures, K7B803625B-QC75 price, #K7B803625B-QC75 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/k7b803625b-qc75.html
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Manufacturer Part Number: K7B803625B-QC75
Rohs Code: No
Part Life Cycle Code: Obsolete
Ihs Manufacturer: SAMSUNG Semiconductor INC
Part Package Code: QFP
Package Description: LQFP, QFP100,.63X.87
Pin Count: 100
ECCN Code: 3A991.B.2.A
HTS Code: 8542.32.00.41
Manufacturer: Samsung Semiconductor
Risk Rank: 5.86
Access Time-Max: 7.5 ns
Clock Frequency-Max (fCLK): 117 MHz
I/O Type: COMMON
JESD-30 Code: R-PQFP-G100
Length: 20 mm
Memory Density: 9437184 bit
Memory IC Type: CACHE SRAM
Memory Width: 36
Moisture Sensitivity Level: 3
Number of Functions: 1
Number of Terminals: 100
Number of Words: 262144 words
Number of Words Code: 256000
Operating Mode: SYNCHRONOUS
Operating Temperature-Max: 70 °C
Organization: 256KX36
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Code: LQFP
Package Equivalence Code: QFP100,.63X.87
Package Shape: RECTANGULAR
Package Style: FLATPACK, LOW PROFILE
Parallel/Serial: PARALLEL
Peak Reflow Temperature (Cel): 240
Power Supplies: 2.5/3.3,3.3 V
Qualification Status: Not Qualified
Seated Height-Max: 1.6 mm
Standby Current-Max: 0.06 A
Standby voltage-Min: 3.14 V
Subcategory: SRAMs
Supply Current-Max: 0.28 mA
Supply voltage-Max (Vsup): 3.465 V
Supply voltage-Min (Vsup): 3.135 V
Supply Voltage-Nom (Vsup): 3.3 V
Surface Mount: YES
Technology: CMOS
Temperature Grade: COMMERCIAL
Terminal Form: GULL WING
Terminal Pitch: 0.65 mm
Terminal Position: QUAD
Time
Cache SRAM, 256KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
Rohs Code: No
Part Life Cycle Code: Obsolete
Ihs Manufacturer: SAMSUNG Semiconductor INC
Part Package Code: QFP
Package Description: LQFP, QFP100,.63X.87
Pin Count: 100
ECCN Code: 3A991.B.2.A
HTS Code: 8542.32.00.41
Manufacturer: Samsung Semiconductor
Risk Rank: 5.86
Access Time-Max: 7.5 ns
Clock Frequency-Max (fCLK): 117 MHz
I/O Type: COMMON
JESD-30 Code: R-PQFP-G100
Length: 20 mm
Memory Density: 9437184 bit
Memory IC Type: CACHE SRAM
Memory Width: 36
Moisture Sensitivity Level: 3
Number of Functions: 1
Number of Terminals: 100
Number of Words: 262144 words
Number of Words Code: 256000
Operating Mode: SYNCHRONOUS
Operating Temperature-Max: 70 °C
Organization: 256KX36
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Code: LQFP
Package Equivalence Code: QFP100,.63X.87
Package Shape: RECTANGULAR
Package Style: FLATPACK, LOW PROFILE
Parallel/Serial: PARALLEL
Peak Reflow Temperature (Cel): 240
Power Supplies: 2.5/3.3,3.3 V
Qualification Status: Not Qualified
Seated Height-Max: 1.6 mm
Standby Current-Max: 0.06 A
Standby voltage-Min: 3.14 V
Subcategory: SRAMs
Supply Current-Max: 0.28 mA
Supply voltage-Max (Vsup): 3.465 V
Supply voltage-Min (Vsup): 3.135 V
Supply Voltage-Nom (Vsup): 3.3 V
Surface Mount: YES
Technology: CMOS
Temperature Grade: COMMERCIAL
Terminal Form: GULL WING
Terminal Pitch: 0.65 mm
Terminal Position: QUAD
Time
Cache SRAM, 256KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100