#K9F5616Q0C-DIB0 SAMSUNG K9F5616Q0C-DIB0 New Flash, 16MX16, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63, K9F5616Q0C-DIB0 pictures, K9F5616Q0C-DIB0 price, #K9F5616Q0C-DIB0 supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/k9f5616q0c-dib0.html
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Manufacturer Part Number: K9F5616Q0C-DIB0
Part Life Cycle Code: Active
Ihs Manufacturer: SAMSUNG Semiconductor INC
Part Package Code: BGA
Package Description: 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
Pin Count: 63
ECCN Code: 3A991.B.1.A
HTS Code: 8542.32.00.51
Manufacturer: Samsung Semiconductor
Risk Rank: 5.65
Access Time-Max: 30 ns
Command User Interface: YES
Data Polling: NO
JESD-30 Code: R-PBGA-B63
Length: 11 mm
Memory Density: 268435456 bit
Memory IC Type: FLASH
Memory Width: 16
Number of Functions: 1
Number of Sectors/Size: 2K
Number of Terminals: 63
Number of Words: 16777216 words
Number of Words Code: 16000000
Operating Mode: ASYNCHRONOUS
Operating Temperature-Max: 85 °C
Operating Temperature-Min: -40 °C
Organization: 16MX16
Package Body Material: PLASTIC/EPOXY
Package Code: VFBGA
Package Equivalence Code: BGA63,10X12,32
Package Shape: RECTANGULAR
Package Style: GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Page Size: 256 words
Parallel/Serial: PARALLEL
Power Supplies: 1.8 V
Programming voltage: 1.8 V
Qualification Status: Not Qualified
Ready/Busy: YES
Seated Height-Max: 1 mm
Sector Size: 8K
Standby Current-Max: 0.00005 A
Subcategory: Flash Memories
Supply Current-Max: 0.015 mA
Supply voltage-Max (Vsup): 1.95 V
Supply Voltage-Min (Vsup): 1.65 V
Supply Voltage-Nom (Vsup): 1.8 V
Surface Mount: YES
Technology: CMOS
Temperature Grade: INDUSTRIAL
Terminal Form: BALL
Terminal Pitch: 0.8 mm
Terminal Position: BOTTOM
Toggle Bit: NO
Type: NAND TYPE
Width: 9 mm
Flash, 16MX16, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
Part Life Cycle Code: Active
Ihs Manufacturer: SAMSUNG Semiconductor INC
Part Package Code: BGA
Package Description: 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
Pin Count: 63
ECCN Code: 3A991.B.1.A
HTS Code: 8542.32.00.51
Manufacturer: Samsung Semiconductor
Risk Rank: 5.65
Access Time-Max: 30 ns
Command User Interface: YES
Data Polling: NO
JESD-30 Code: R-PBGA-B63
Length: 11 mm
Memory Density: 268435456 bit
Memory IC Type: FLASH
Memory Width: 16
Number of Functions: 1
Number of Sectors/Size: 2K
Number of Terminals: 63
Number of Words: 16777216 words
Number of Words Code: 16000000
Operating Mode: ASYNCHRONOUS
Operating Temperature-Max: 85 °C
Operating Temperature-Min: -40 °C
Organization: 16MX16
Package Body Material: PLASTIC/EPOXY
Package Code: VFBGA
Package Equivalence Code: BGA63,10X12,32
Package Shape: RECTANGULAR
Package Style: GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Page Size: 256 words
Parallel/Serial: PARALLEL
Power Supplies: 1.8 V
Programming voltage: 1.8 V
Qualification Status: Not Qualified
Ready/Busy: YES
Seated Height-Max: 1 mm
Sector Size: 8K
Standby Current-Max: 0.00005 A
Subcategory: Flash Memories
Supply Current-Max: 0.015 mA
Supply voltage-Max (Vsup): 1.95 V
Supply Voltage-Min (Vsup): 1.65 V
Supply Voltage-Nom (Vsup): 1.8 V
Surface Mount: YES
Technology: CMOS
Temperature Grade: INDUSTRIAL
Terminal Form: BALL
Terminal Pitch: 0.8 mm
Terminal Position: BOTTOM
Toggle Bit: NO
Type: NAND TYPE
Width: 9 mm
Flash, 16MX16, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63