#SIR164DP SI SIR164DP New mosfet N-CH D-S 30V 8-SOIC, SIR164DP pictures, SIR164DP price, #SIR164DP supplier
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Email: sales@shunlongwei.com
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Email: sales@shunlongwei.com
https://www.slw-ele.com/sir164dp.html
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Manufacturer Part Number: SIR164DP-T1-GE3
Pbfree Code: Not Recommended
Ihs Manufacturer: VISHAY SILICONIX
Part Package Code: SOT
Package Description: SMALL OUTLINE, R-PDSO-C5
Pin Count: 8
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 7.74
Avalanche Energy Rating (Eas): 80 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 30 V
Drain Current-Max (Abs) (ID): 50 A
Drain Current-Max (ID): 33.3 A
Drain-source On Resistance-Max: 0.0025 Ω
FET Technology: METAL-OXIDE Semiconductor
JESD-30 Code: R-PDSO-C5
JESD-609 Code: e3
Number of Elements: 1
Number of Terminals: 5
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 69 W
Pulsed Drain Current-Max (IDM): 70 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
Terminal Form: C BEND
Terminal Position: DUAL
Time
MOSFET N-CH D-S 30V 8-SOIC
Pbfree Code: Not Recommended
Ihs Manufacturer: VISHAY SILICONIX
Part Package Code: SOT
Package Description: SMALL OUTLINE, R-PDSO-C5
Pin Count: 8
ECCN Code: EAR99
Manufacturer: Vishay Siliconix
Risk Rank: 7.74
Avalanche Energy Rating (Eas): 80 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown voltage-Min: 30 V
Drain Current-Max (Abs) (ID): 50 A
Drain Current-Max (ID): 33.3 A
Drain-source On Resistance-Max: 0.0025 Ω
FET Technology: METAL-OXIDE Semiconductor
JESD-30 Code: R-PDSO-C5
JESD-609 Code: e3
Number of Elements: 1
Number of Terminals: 5
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 69 W
Pulsed Drain Current-Max (IDM): 70 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: MATTE TIN
Terminal Form: C BEND
Terminal Position: DUAL
Time
MOSFET N-CH D-S 30V 8-SOIC