Nexperia has released a 650V SiC Schottky diode developed for power applications which need ultra-high performance, low loss, and high efficiency. The 10A, 650V device is an industrial-grade part that meets the demands of challenging high voltage and high current applications. These comprise SMPS, AC/DC and DC-DC converters, battery-charging infrastructure, UPS, and photovoltaic inverters, allowing for more sustainable operations. Data centres, for example, provided with power supplies created using the company’s PSC1065K SiC Schottky diode will be better positioned to satisfy rigorous energy efficiency standards than those employing solely silicon-based solutions.
The diode supplies leading-edge performance with temperature-independent capacitive switching and zero recovery behaviour finishing in an excellent FoM (QC x VF). Its excellent switching performance is nearly completely independent of current and switching speed variations. The merged PiN Schottky structure of the device delivers additional benefits, such as exceptional robustness against surge currents that remove the necessity for extra protection circuitry. These features greatly lower system complexity and allow hardware designers to attain higher efficiency with smaller form factors in robust high-power applications. Designers can be further reassured by the company’s proven reputation as a supplier of high-quality products in various Semiconductor technologies.
This diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 through-hole power plastic package. Extra package options comprise the surface mount (DPAK R2P and D2PAK R2P) and through-hole (TO-247-2) with an R2P configuration that improves reliability in high-voltage applications at temperatures up to 175C.
Katrin Feurle, senior director of the Product Group SiC at Nexperia, adds: “We are proud to offer a high-performance SiC Schottky diode that ranks among the top tier of currently available solutions. In an increasingly energy-conscious world, we are bringing greater choice and availability to the market as demand for high-volume, high-efficiency applications increases significantly.”
The company plans to continually augment its portfolio of SiC diodes by incorporating automotive-grade parts that function at 650V and 1200V voltages with currents in the 6-20A range. Samples and production quantities of the new diodes are available now.
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