ON Semiconductor has announced two 1200-V silicon carbide (SiC) mosfet 2-pack modules for the electric vehicle (EV) market, ahead of APEC 2021. The SiC MOSFET modules, based on planar technology, can drive a voltage range of 18-20 V. The devices are simple to drive with negative gate voltages, said the company.
Designed for EV charging station applications and configured as a 2-pack half bridge, the NXH010P120MNF1 is a 10-mohm device housed in an F1 package while the NXH006P120MNF2 is a 6-mohm device in an F2 package. The packages feature press-fit pins making them suitable for industrial applications. The larger die reduces thermal resistance compared to trench mosfets, which reduces die temperature at the same operating temperature, according to the company.
The new SiC MOSFET modules have been designed to work with ON Semi’s driver solutions such as the NCD5700x devices. The recently introduced driver offers 5 kV of galvanic isolation and can be configured for dual low-side, dual high-side or half-bridge operation. It is housed in a small SOIC-16 wide body package and accepts logic level inputs (3.3 V, 5 V & 15 V). The high current device (source 4.0 A / sink 6.0 A at Miller plateau voltage) is suitable for high-speed operation with typical propagation delays of 60 ns.
During APEC 2021, ON Semiconductor will showcase its SiC solutions including 650-V SiC MOSFETs and 1200-V and 900-V N-channel SiC MOSFETs. The company also plans to host several seminars about its solutions for off-board EV charging.
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