ST BUZ305 In-Stock

#BUZ305 ST BUZ305 New Power Field-Effect Transistor, 7.5A I(D), 800V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, TO-218AB, 3 PIN, BUZ305 pictures, BUZ305 price, #BUZ305 supplier
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Manufacturer Part Number: BUZ305
Part Life Cycle Code: Transferred
Ihs Manufacturer: SIEMENS A G
Part Package Code: TO-218
Package Description: FLANGE MOUNT, R-PSFM-T3
Pin Count: 3
Manufacturer: Siemens
Risk Rank: 5.24
Avalanche Energy Rating (Eas): 830 mJ
Configuration: SINGLE
DS Breakdown voltage-Min: 800 V
Drain Current-Max (ID): 7.5 A
Drain-source On Resistance-Max: 1 Ω
FET Technology: METAL-OXIDE Semiconductor
Feedback Cap-Max (Crss): 140 pF
JEDEC-95 Code: TO-218
JESD-30 Code: R-PSFM-T3
Number of Elements: 1
Number of Terminals: 3
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation Ambient-Max: 150 W
Pulsed Drain Current-Max (IDM): 30 A
Qualification Status: Not Qualified
Surface Mount: NO
Terminal Form: THROUGH-HOLE
Terminal Position: SINGLE
Transistor Application: SWITCHING
Transistor Element Material: SILICON
Turn-off Time-Max (toff): 690 ns
Turn-on Time-Max (ton): 205 ns
Power Field-Effect Transistor, 7.5A I(D), 800V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, TO-218AB, 3 PIN