Fuji 1D500A-030 Features: Applications: Maximum Ratings: Mounting: Recommendable Values for Screw Torque: Weight:
At the recent PCIM Europe 2023 conference, several silicon carbide device manufacturers and university researchers introduced and shared performance characteristics of SiC MOSFETs at the 3.3-kV voltage rating. This voltage is increasingly being seen as key to meeting several future applications, such as medium-voltage grid power conversion at a 1,500-V DC-link voltage, photovoltaics and wind renewable-energy […]
Personal and commercial transportation currently contributes to almost a third of greenhouse gas (GHG) emissions. Some obstacles to the wider adoption of electric vehicles (EVs) include the battery range, the charging time, and the charging infrastructure. Standards for passenger electric vehicles (EVs) are now better defined, with the Charging Interface Initiative (CharIN) task force developing the Combined Charging System (CCS) […]
Package with screw terminalsIsolation voltage of 3000 VPlanar passivated chipsApplications:Input rectifier for PWM converterInput rectifier for switch mode power supplies (SMPS)Softstart capacitor chargingAdvantages:Easy to mount with two screwsSpace and weight savingsImproved temperature and power cyclingMaximum Ratings and Characteristics (Tc=25°C unless otherwise specified):Collector-Emitter voltage (Vces): 1600VGate-Emitter voltage (VGES): ±20VCollector current (IC): 500ACollector current (Icp): 1000ACollector power […]
The Mitsubishi CM1000E4C-66R is an IGBT (Insulated Gate Bipolar Transistor) module with the following specifications and features: Applications: Additional information:
The MG500Q1US1 power module manufactured by Toshiba.Model: MG500Q1US1Type: IGBTPower ModuleConfiguration: Single IGBTvoltage Rating: 1200VCurrent Rating: 500APackage Type: ModuleFeatures: High Power Density, Low Saturation voltage, Low Switching LossesApplication: Motor Drives, Inverters, Power Supplies, Industrial ApplicationsThe MG500Q1US1 power module is designed for high-power applications and consists of a single IGBT integrated into a module. Used in motor […]
The Semikron SEMiX353GB126V1 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Semikron. Here are the features and specifications of the module: Features: Typical Applications: Remarks: Maximum Ratings and Characteristics: Weight: 350g These specifications provide information about the module’s voltage, current, power dissipation, temperature ratings, mounting screw torque, weight, and other relevant details.
Here are the features and maximum ratings/characteristics of the Semikron SKM500GA124DH6 IGBT module:Features:MOS input (voltage controlled): The module utilizes a mosfet-based input for voltage control.N channel, homogeneous Si: The IGBTs in the module are of the N-channel type and made of homogeneous silicon.Low inductance case: The module is designed with a low inductance case to […]
switching applications and features advanced technologies for efficient and reliable operation.Manufacturer: Infineon TechnologiesPart Number: FZ1000R16KF4Power Module Type: IGBT (Insulated Gate Bipolar Transistor)Maximum Collector Current (IC): 1000ACollector-Emitter voltage (VCE): 1600VTotal Power Dissipation (Ptot): 9600WGate-Emitter Peak voltage (VGES): +/-20VTemperature Range: -40 to 150°CWeight: 800gConfiguration: Single IGBT ChipPackage Type: ModuleMounting Style: Screw MountHigh-power handling capabilityLow conduction and switching […]